Optimization of a SiGe:C HBT in a BiCMOS Technology for Low Power Wireless Applications
نویسندگان
چکیده
The performance enhancement of a SiGe:C HBT for RF/IF applications is described for Motorola’s 0.35μm and 0.18μm BiCMOS technologies. Cutoff frequencies (fT) have been improved from 50GHz to 78/84GHz (0.35/0.18μm BiCMOS), with a reduction in minimum noise figure (NF) from 0.7dB to 0.3dB. Improvements occurred through the optimization of the intrinsic collector and base dopant profiles, extrinsic collector resistance, and device layout.
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